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low noise pseudomorphic hemt in a surface mount plastic package technical data atf-33143 features ? lead-free option available ? low noise figure ? excellent uniformity in product specifications ? 1600 micron gate width ? low cost surface mount small plastic package sot-343 (4 lead sc-70) ? tape-and-reel packaging option available specifications 1.9 ghz; 4v, 80 ma (typ.) ? 0.5 db noise figure ? 15 db associated gain ? 22 dbm output power at 1 db gain compression ? 33.5 dbm output 3 rd order intercept applications ? tower mounted amplifier, low noise amplifier and driver amplifier for gsm/ tdma/cdma base stations ? lna for wireless lan, wll/ rll and mmds applications ? general purpose discrete phemt for other ultra low noise applications surface mount package sot-343 description agilents atf-33143 is a high dynamic range, low noise phemt housed in a 4-lead sc-70 (sot-343) surface mount plastic package. based on its featured performance, atf-33143 is ideal for the first or second stage of base station lna due to the excellent combination of low noise figure and enhanced linearity [1] . the device is also suitable for applications in wire- less lan, wll/rll, mmds, and other systems requiring super low noise figure with good intercept in the 450 mhz to 10 ghz frequency range. note: 1. from the same phemt fet family, the smaller geometry atf-34143 may also be considered for the higher gain performance, particularly in the higher frequency band (1.8 ghz and up). pin connections and package marking gate 3px source drain source note: top view. package marking provides orientation and identification. 3p = device code x = date code character. a new character is assigned for each month, year. attention: observe precautions for handling electrostatic sensitive devices. esd machine model (class a) esd human body model (class 1) refer to agilent application note a004r: electrostatic discharge damage and control.
2 atf-33143 absolute maximum ratings [1] absolute symbol parameter units maximum v ds drain - source voltage [2] v 5.5 v gs gate - source voltage [2] v-5 v gd gate drain voltage [2] v-5 i ds drain current [2] ma i dss [3] p diss total power dissipation [4] mw 600 p in max rf input power dbm 20 t ch channel temperature [5] c 160 t stg storage temperature c -65 to 160 jc thermal resistance [6] c/w 145 notes: 1. operation of this device above any one of these parameters may cause permanent damage. 2. assumes dc quiesent conditions. 3. v gs = 0 v 4. source lead temperature is 25 c. derate 6 mw/ c for t l > 60 c. 5. please refer to failure rates in reliability section to assess the reliability impact of running devices above a channel temperature of 140 c. 6. thermal resistance measured using 150 c liquid crystal measurement method. product consistency distribution charts [8, 9] v ds (v) figure 1. typical pulsed i-v curves [7] . (v gs = -0.2 v per step) i ds (ma) 02 4 68 500 400 300 200 100 0 0 v ?.6 v +0.6 v nf (db) figure 2. nf @ 2 ghz, 4 v, 80 ma. lsl=0.2, nominal=0.53, usl=0.8 0.2 0.4 0.3 0.6 0.5 0.8 0.7 -3 std +3 std cpk = 1.7 std = 0.05 120 100 80 60 40 20 0 oip3 (dbm) figure 3. oip3 @ 2 ghz, 4 v, 80 ma. lsl=30.0, nominal=33.3, usl=37.0 29 37 -3 std +3 std cpk = 1.21 std = 0.94 100 80 60 40 20 0 33 31 35 gain (db) figure 4. gain @ 2 ghz, 4 v, 80 ma. lsl=13.5, nominal=14.8, usl=16.5 13 14 15 16 17 -3 std +3 std cpk = 2.3 std = 0.2 120 100 80 60 40 20 0 notes: 7. under large signal conditions, v gs may swing positive and the drain current may exceed i dss . these conditions are acceptable as long as the maximum p diss and p in max ratings are not exceeded. 8. distribution data sample size is 450 samples taken from 9 different wafers. future wafers allocated to this product may have nominal values anywhere within the upper and lower spec limits. 9. measurements made on production test board. this circuit represents a trade-off between an optimal noise match and a realizeable match based on production test requirements. circuit losses have been de-embedded from actual measurements. 10. the probability of a parameter being between 1 is 68.3%, between 2 is 95.4% and between 3 is 99.7%.
3 figure 5. block diagram of 2 ghz production test board used for noise figure, associated gain, p 1db , and oip3 measure- ments. this circuit represents a trade-off between an optimal noise match and a realizable match based on production test requirements. circuit losses have been de-embedded from actual measurements. input 50 ohm transmission line including gate bias t (0.5 db loss) input matching circuit _mag = 0.20 _ang = 124 (0.3 db loss) dut 50 ohm transmission line including drain bias t (0.5 db loss) output atf-33143 dc electrical specifications t a = 25 c, rf parameters measured in a test circuit for a typical device symbol parameters and test conditions units min. typ. [2] max. i dss [1] saturated drain current v ds = 1.5 v, v gs = 0 v ma 175 237 305 v p [1] pinchoff voltage v ds = 1.5 v, i ds = 10% of i dss v -0.65 -0.5 -0.35 i d quiescent bias current v gs = -0.5 v, v ds = 4 v ma 80 g m [1] transconductance v ds = 1.5 v, g m = i dss /v p mmho 360 440 i gdo gate to drain leakage current v gd = 5 v a 1000 i gss gate leakage current v gd = v gs = -4 v a 42 600 f = 2 ghz v ds = 4 v, i ds = 80 ma db 0.5 0.8 nf noise figure v ds = 4 v, i ds = 60 ma 0.5 f = 900 mhz v ds = 4 v, i ds = 80 ma db 0.4 v ds = 4 v, i ds = 60 ma 0.4 f = 2 ghz v ds = 4 v, i ds = 80 ma db 13.5 15 16.5 g a associated gain [3] v ds = 4 v, i ds = 60 ma 15 f = 900 mhz v ds = 4 v, i ds = 80 ma db 21 v ds = 4 v, i ds = 60 ma 21 output 3 rd order f = 2 ghz v ds = 4 v, i ds = 80 ma dbm 30 33.5 oip3 intercept point [3] 5 dbm pout/tone v ds = 4 v, i ds = 60 ma 32 f = 900 mhz v ds = 4 v, i ds = 80 ma dbm 32.5 5 dbm pout/tone v ds = 4 v, i ds = 60 ma 31 1 db compressed f = 2 ghz v ds = 4 v, i ds = 80 ma dbm 22 p 1db compressed power [3] v ds = 4 v, i ds = 60 ma 21 f = 900 mhz v ds = 4 v, i ds = 80 ma dbm 21 v ds = 4 v, i ds = 60 ma 20 notes: 1. guaranteed at wafer probe level. 2. typical value determined from a sample size of 450 parts from 9 wafers. 3. measurements obtained using production test board described in figure 5.
4 atf-33143 typical performance curves notes: 1. measurements made on a fixed tuned production test board that was tuned for optimal gain match with reasonable noise figure a t 4v 80 ma bias. this circuit represents a trade-off between optimal noise match, maximum gain match and a realizable match based on production test board requirements. circuit losses have been de-embedded from actual measurements. 2. quiescent drain current, i dsq , is set with zero rf drive applied. as p 1db is approached, the drain current may increase or decrease depending on frequency and dc bias point. at lower values of i dsq the device is running closer to class b as power output approaches p 1db . this results in higher p 1db and higher pae (power added efficiency) when compared to a device that is driven by a constant current source as is typically done with active biasing. figure 8. p 1db vs. bias [1,2] at 2 ghz. figure 9. p 1db vs. bias [1,2] tuned for nf @ 4v, 80 ma at 900 mhz. figure 10. nf and g a vs. bias [1] at 2 ghz. figure 11. nf and g a vs. bias [1] at 900 mhz. i dsq (ma) figure 6. oip3, iip3 vs. bias [1] at 2 ghz. oip3, iip3 (dbm) 0 120 40 30 20 10 0 40 20 100 80 60 2 v 3 v 4 v i dsq (ma) figure 7. oip3, iip3 vs. bias [1] at 900 mhz. oip3, iip3 (dbm) 40 30 20 10 0 2 v 3 v 4 v 0 120 40 20 100 80 60 i dsq (ma) p 1db (dbm) 25 20 15 10 5 0 2 v 3 v 4 v 0 120 40 20 80 100 60 nf g a i dsq (ma) g a (db) 16 15 14 13 12 11 10 1.4 1.2 1.0 0.8 0.6 0.4 0.2 noise figure (db) 2 v 3 v 4 v 0 120 40 20 80 100 60 i dsq (ma) g a (db) 22 21 20 19 18 17 16 1.2 1.0 0.8 0.6 0.4 0.2 0 noise figure (db) 2 v 3 v 4 v nf g a 0 120 40 20 80 100 60 i dsq (ma) p 1db (dbm) 25 20 15 10 5 0 2 v 3 v 4 v 0 120 40 20 80 100 60
5 atf-33143 typical performance curves, continued notes: 1. measurements made on a fixed tuned test fixture that was tuned for noise figure at 4v 80 ma bias. this circuit represents a t rade-off between optimal noise match, maximum gain match and a realizable match based on production test requirements. circuit losses ha ve been de-embedded from actual measurements. 2. quiescent drain current, i dsq , is set with zero rf drive applied. as p 1db is approached, the drain current may increase or decrease depending on frequency and dc bias point. at lower values of i dsq the device is running closer to class b as power output approaches p 1db . this results in higher p 1db and higher pae (power added efficiency) when compared to a device that is driven by a constant current source as is typically done with active biasing. figure 12. f min vs. frequency and current at 4 v. figure 13. associated gain vs. frequency and current at 4 v. frequency (mhz) figure 15. p 1db , oip3 vs. frequency and temp at v ds = 4 v, i ds = 80 ma. p 1db , oip3 (dbm) 0 8000 40 35 30 25 20 15 4000 2000 6000 25 c -40 c 85 c figure 16. oip3, p 1db , nf and gain vs. bias [1,2] at 3.9 ghz. figure 17. oip3, p 1db , nf and gain vs. bias [1,2] at 5.8 ghz. 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 frequency (ghz) f min (db) 010 1.5 1.0 0.5 0 4 28 6 80 ma 60 ma frequency (ghz) g a (db) 010 30 25 20 15 10 5 0 4 28 6 80 ma 60 ma frequency (ghz) g a (db) noise figure (db) 25 20 15 10 5 2.0 1.5 1.0 0.5 0 25 c -40 c 85 c 010 4 28 6 figure 14. f min and g a vs. frequency and temp at v ds = 4 v, i ds = 80 ma. i dsq (ma) oip3, p 1db (dbm), gain (db) 35 30 25 20 15 10 5 0 noise figure (db) p 1db oip3 gain nf 0 120 40 20 80 100 60 i dsq (ma) oip3, p 1db (dbm), gain (db) 35 30 25 20 15 10 5 0 noise figure (db) 3 2 1 0 p 1db oip3 nf gain 0 120 40 20 80 100 60
6 atf-33143 typical performance curves, continued note: 1. measurements made on a fixed tuned test board that was tuned for optimal gain match with reasonable noise figure at 4v 80 ma bias. this circuit represents a trade-off between an optimal noise match, maximum gain match and a realizable match based on producti on test board requirements. circuit losses have been de-embedded from actual measurements. i ds (ma) figure 18. p 1db vs. i ds active bias [1] tuned for nf @ 4 v, 80 ma at 2 ghz. p 1db (dbm) 25 20 15 10 5 0 0 120 40 20 80 100 60 i ds (ma) figure 19. p 1db vs. i ds active bias [1] tuned for nf @ 4 v, 80 ma at 900 mhz. p 1db (dbm) 25 20 15 10 5 0 0 120 40 20 80 100 60
7 notes: 1. measurements made on atn lp1 power load pull system. 2. quicescent drain current, i dsq , is set with zero rf drive applied. as p 1db is approached, the drain current may increase or decrease depending on frequency and dc bias point. at lower values of i dsq the device is running closer to class b as power output approaches p 1db . this results in higher p 1db and higher pae (power added efficiency) when compared to a device that is driven by a constant current source as is typically done with active biasing. 3. pae (%) = ((p out C p in ) / p dc ) x 100 4. gamma out is the reflection coefficient of the matching circuit presented to the output of the device. atf-33143 power parameters tuned for max p 1db , v ds = 4 v, i dsq = 80 ma freq p 1db i d g 1db pae 1db p 3db i d pae 3db out_mag out_ang (ghz) (dbm) (ma) (db) (%) (dbm) (ma) (%) (mag.) ( ) 0.9 20.7 89 23.2 33 23.2 102 51 0.39 160 1.5 21.2 91 20.7 36 23.8 116 51 0.43 165 1.8 21.1 80 19.2 40 23.0 94 52 0.43 170 2.0 21.6 81 18.1 44 23.2 89 57 0.42 174 4.0 23.0 97 11.9 48 24.6 135 48 0.40 -150 6.0 24.0 130 5.9 36 25.2 136 36 0.37 -124 p in (dbm) figure 20. swept power tuned for max p 1db v ds = 4v, i dsq = 80 ma, 2 ghz. p out (dbm), g (db), pae (%) 70 60 50 40 30 20 10 0 -10 -20 -40 -30 -10 -20 10 20 0 p out gain pae
8 notes: 1. the f min values are based on a set of 16 noise figure measurements made at 16 different impedances using an atf np5 test system. from these measurements a true f min is calculated. refer to the noise parameter application section for more information. 2. s and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. the input reference plane is at the end of the gate lead. the output reference plane is at the end of the drain lead. the parameters include the effect of four pla ted through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side o f the carrier. two 0.020 inch diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each si de of that point. atf-33143 typical noise parameters v ds = 2v, i ds = 40 ma freq. f min opt r n/50 g a ghz db mag. ang. - db 0.5 0.26 0.45 26.00 0.07 24.74 0.9 0.30 0.38 42.20 0.07 21.02 1.0 0.31 0.36 44.80 0.07 20.36 1.5 0.34 0.31 69.50 0.06 17.40 1.8 0.34 0.26 93.60 0.04 16.50 2.0 0.39 0.27 108.60 0.05 15.82 2.5 0.51 0.28 150.70 0.03 14.59 3.0 0.53 0.32 165.60 0.03 13.13 4.0 0.61 0.41 -162.10 0.04 11.27 5.0 0.70 0.49 -136.80 0.06 9.92 6.0 0.82 0.53 -113.60 0.11 8.70 7.0 0.93 0.59 -91.50 0.23 7.71 8.0 1.04 0.62 -72.60 0.38 6.69 9.0 1.12 0.67 -55.90 0.59 6.04 10.0 1.21 0.69 -42.20 0.77 5.73 atf-33143 typical scattering parameters, v ds = 2v, i ds = 40 ma freq. s 11 s 21 s 12 s 22 msg/mag (ghz) mag. ang. db mag. ang. db mag. ang. mag. ang. (db) 0.5 0.88 -72.70 22.08 12.81 134.40 -27.02 0.045 54.50 0.28 -118.70 24.54 0.8 0.79 -112.10 19.46 9.41 111.20 -24.13 0.062 40.70 0.37 -149.90 21.81 1.0 0.78 -119.80 18.86 8.86 106.50 -23.93 0.064 38.00 0.38 -155.40 21.41 1.5 0.75 -149.60 16.11 6.44 88.30 -22.57 0.075 29.80 0.42 -176.20 19.34 1.8 0.74 -162.80 14.70 5.47 79.80 -22.14 0.079 26.80 0.45 174.70 18.40 2.0 0.74 -170.10 13.84 4.94 74.80 -21.84 0.082 24.90 0.46 169.40 17.80 2.5 0.74 172.30 11.98 3.98 63.00 -21.24 0.088 20.80 0.49 160.10 16.56 3.0 0.75 159.10 10.37 3.31 53.10 -20.68 0.094 17.10 0.51 152.10 15.46 4.0 0.75 137.00 7.95 2.50 35.00 -19.59 0.106 9.30 0.53 139.20 13.73 5.0 0.76 117.20 6.20 2.05 17.20 -18.56 0.119 -0.70 0.54 124.70 11.44 6.0 0.78 98.10 4.69 1.73 -1.30 -17.83 0.129 -12.80 0.54 108.00 9.80 7.0 0.80 80.10 3.12 1.44 -19.30 -17.42 0.135 -26.00 0.57 90.40 8.35 8.0 0.83 64.50 1.68 1.22 -35.20 -17.29 0.137 -37.30 0.60 74.80 7.43 9.0 0.83 50.30 0.48 1.07 -49.30 -17.08 0.140 -46.80 0.63 62.70 6.45 10.0 0.86 36.30 -0.46 0.96 -64.30 -16.59 0.148 -58.30 0.65 50.90 6.41 11.0 0.88 21.50 -1.50 0.85 -80.20 -16.53 0.149 -71.30 0.68 37.40 6.14 12.0 0.90 7.20 -2.70 0.74 -95.80 -16.81 0.144 -83.90 0.72 21.40 5.64 13.0 0.91 -5.00 -4.24 0.62 -110.20 -17.38 0.135 -95.60 0.75 5.80 4.60 14.0 0.91 -15.50 -5.49 0.54 -121.90 -17.78 0.129 -103.90 0.77 -5.70 3.64 15.0 0.92 -27.50 -6.42 0.49 -134.20 -18.00 0.126 -113.70 0.80 -15.80 3.44 16.0 0.93 -40.50 -7.26 0.44 -146.80 -17.87 0.128 -124.20 0.82 -25.70 3.22 17.0 0.94 -52.30 -8.20 0.40 -160.40 -18.07 0.125 -136.40 0.83 -37.90 3.11 18.0 0.93 -61.20 -9.51 0.34 -171.00 -18.79 0.115 -145.10 0.85 -49.70 1.79 frequency (ghz) figure 21. msg/mag and |s 21 | 2 vs. frequency at 2v, 40 ma. msg/mag and |s 21 | 2 (db) 020 40 30 20 10 0 -10 10 515 msg mag |s 21 | 2
9 notes: 1. the f min values are based on a set of 16 noise figure measurements made at 16 different impedances using an atf np5 test system. from these measurements a true f min is calculated. refer to the noise parameter application section for more information. 2. s and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. the input reference plane is at the end of the gate lead. the output reference plane is at the end of the drain lead. the parameters include the effect of four pla ted through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side o f the carrier. two 0.020 inch diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each si de of that point. atf-33143 typical noise parameters v ds = 3 v, i ds = 40 ma freq. f min opt r n/50 g a ghz db mag. ang. - db 0.5 0.24 0.45 28.40 0.07 25.26 0.9 0.29 0.38 40.90 0.07 21.26 1.0 0.31 0.34 42.60 0.07 20.50 1.5 0.37 0.28 66.30 0.07 17.67 1.8 0.34 0.25 90.10 0.05 16.57 2.0 0.38 0.25 105.80 0.05 15.93 2.5 0.51 0.28 147.40 0.03 14.72 3.0 0.52 0.31 162.80 0.03 13.29 4.0 0.58 0.40 -165.20 0.03 11.45 5.0 0.68 0.46 -138.50 0.05 10.05 6.0 0.80 0.54 -115.00 0.09 8.97 7.0 0.89 0.57 -92.50 0.20 7.90 8.0 1.01 0.61 -72.80 0.35 6.90 9.0 1.09 0.65 -56.40 0.53 6.26 10.0 1.18 0.68 -42.60 0.69 5.99 atf-33143 typical scattering parameters, v ds = 3 v, i ds = 40 ma freq. s 11 s 21 s 12 s 22 msg/mag (ghz) mag. ang. db mag. ang. db mag. ang. mag. ang. (db) 0.5 0.87 -72.20 22.51 13.42 134.40 -27.20 0.044 54.40 0.27 -109.80 24.84 0.8 0.78 -111.60 19.88 9.87 111.20 -24.27 0.061 40.60 0.35 -143.70 22.09 1.0 0.77 -119.30 19.28 9.26 106.50 -24.06 0.063 37.90 0.36 -150.10 21.67 1.5 0.74 -149.00 16.52 6.73 88.30 -22.79 0.073 29.80 0.40 -172.10 19.64 1.8 0.73 -162.20 15.11 5.72 79.90 -22.34 0.077 26.90 0.42 178.40 18.71 2.0 0.73 -169.50 14.24 5.17 74.80 -22.13 0.079 25.00 0.43 172.90 18.16 2.5 0.73 172.90 12.38 4.17 63.10 -21.41 0.086 21.10 0.46 163.10 16.85 3.0 0.74 159.70 10.78 3.46 53.30 -20.91 0.091 17.50 0.48 154.80 15.80 4.0 0.74 137.60 8.37 2.62 35.20 -19.79 0.103 10.00 0.50 141.20 14.06 5.0 0.75 117.70 6.63 2.15 17.30 -18.80 0.115 0.00 0.51 126.50 11.53 6.0 0.77 98.60 5.10 1.80 -1.30 -17.99 0.126 -11.90 0.52 109.80 9.99 7.0 0.79 80.60 3.54 1.51 -19.50 -17.58 0.132 -24.90 0.55 92.10 8.57 8.0 0.82 64.90 2.10 1.28 -35.50 -17.44 0.134 -36.00 0.57 76.20 7.64 9.0 0.83 50.70 0.92 1.12 -49.60 -17.13 0.139 -45.50 0.60 64.00 6.69 10.0 0.86 36.60 -0.04 1.00 -64.90 -16.64 0.147 -57.00 0.63 52.10 6.65 11.0 0.88 21.90 -1.11 0.89 -81.00 -16.58 0.148 -70.10 0.66 38.60 6.38 12.0 0.90 7.50 -2.32 0.77 -96.80 -16.81 0.144 -82.70 0.70 22.60 6.00 13.0 0.91 -4.80 -3.86 0.64 -111.40 -17.38 0.135 -94.40 0.73 6.80 4.90 14.0 0.91 -15.40 -5.11 0.56 -123.30 -17.78 0.129 -103.00 0.76 -5.00 3.90 15.0 0.92 -27.40 -6.05 0.50 -135.90 -17.93 0.127 -112.80 0.79 -15.10 3.71 16.0 0.93 -40.40 -6.95 0.45 -148.70 -17.87 0.128 -123.40 0.81 -25.10 3.48 17.0 0.94 -52.30 -7.91 0.41 -162.30 -18.00 0.126 -135.70 0.82 -37.30 3.41 18.0 0.93 -61.30 -9.25 0.35 -172.90 -18.72 0.116 -144.30 0.84 -49.10 1.94 frequency (ghz) figure 22. msg/mag and |s 21 | 2 vs. frequency at 3v, 40 ma. msg/mag and |s 21 | 2 (db) 020 40 30 20 10 0 -10 10 515 msg mag |s 21 | 2
10 notes: 1. the f min values are based on a set of 16 noise figure measurements made at 16 different impedances using an atf np5 test system. from these measurements a true f min is calculated. refer to the noise parameter application section for more information. 2. s and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. the input reference plane is at the end of the gate lead. the output reference plane is at the end of the drain lead. the parameters include the effect of four pla ted through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side o f the carrier. two 0.020 inch diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each si de of that point. atf-33143 typical noise parameters v ds = 3 v, i ds = 60 ma freq. f min opt r n/50 g a ghz db mag. ang. - db 0.5 0.23 0.43 29.20 0.06 25.64 0.9 0.28 0.35 42.40 0.06 21.62 1.0 0.29 0.35 45.00 0.07 20.87 1.5 0.34 0.26 68.80 0.06 17.84 1.8 0.34 0.23 93.30 0.04 16.89 2.0 0.38 0.22 109.70 0.05 16.24 2.5 0.52 0.25 150.60 0.03 14.93 3.0 0.53 0.30 167.50 0.03 13.52 4.0 0.61 0.39 -160.30 0.04 11.65 5.0 0.68 0.47 -134.70 0.06 10.28 6.0 0.83 0.52 -112.10 0.11 9.09 7.0 0.91 0.58 -89.70 0.22 8.09 8.0 1.04 0.61 -71.50 0.36 7.07 9.0 1.09 0.66 -54.80 0.56 6.43 10.0 1.13 0.70 -41.40 0.73 6.15 atf-33143 typical scattering parameters, v ds = 3 v, i ds = 60 ma freq. s 11 s 21 s 12 s 22 msg/mag (ghz) mag. ang. db mag. ang. db mag. ang. mag. ang. (db) 0.5 0.87 -75.30 22.95 14.06 133.00 -28.18 0.039 55.10 0.27 -124.20 25.57 0.8 0.78 -114.70 20.22 10.26 110.00 -25.19 0.055 42.60 0.36 -153.90 22.71 1.0 0.77 -122.30 19.59 9.56 105.50 -24.89 0.057 40.50 0.37 -158.80 22.24 1.5 0.74 -151.60 16.78 6.91 87.60 -23.37 0.068 33.50 0.41 -178.70 20.07 1.8 0.73 -164.60 15.35 5.87 79.30 -22.87 0.072 30.80 0.43 172.60 19.11 2.0 0.73 -171.80 14.47 5.30 74.40 -22.53 0.075 29.00 0.44 167.50 18.49 2.5 0.73 171.00 12.60 4.27 62.80 -21.76 0.082 25.10 0.47 158.50 17.17 3.0 0.74 158.10 10.99 3.54 53.10 -21.07 0.089 21.40 0.50 151.00 16.00 4.0 0.75 136.40 8.56 2.68 35.40 -19.79 0.103 13.20 0.52 138.60 14.15 5.0 0.75 116.90 6.80 2.19 17.70 -18.68 0.117 2.80 0.52 124.40 11.53 6.0 0.77 97.80 5.28 1.84 -0.60 -17.88 0.128 -9.70 0.53 107.80 10.03 7.0 0.79 79.90 3.71 1.53 -18.60 -17.42 0.135 -23.20 0.56 90.20 8.66 8.0 0.82 64.50 2.26 1.30 -34.40 -17.29 0.137 -34.60 0.59 74.70 7.75 9.0 0.83 50.40 1.07 1.13 -48.50 -17.03 0.141 -44.50 0.62 62.70 6.81 10.0 0.86 36.40 0.12 1.02 -63.50 -16.49 0.150 -56.20 0.65 50.90 6.72 11.0 0.88 21.60 -0.94 0.90 -79.50 -16.43 0.151 -69.40 0.68 37.40 6.46 12.0 0.90 7.30 -2.13 0.78 -95.10 -16.71 0.146 -82.10 0.71 21.40 6.04 13.0 0.91 -5.00 -3.67 0.66 -109.70 -17.27 0.137 -94.00 0.74 5.80 4.99 14.0 0.91 -15.50 -4.93 0.57 -121.40 -17.72 0.130 -102.70 0.77 -6.10 3.98 15.0 0.92 -27.50 -5.85 0.51 -133.90 -17.86 0.128 -112.40 0.80 -15.80 3.78 16.0 0.93 -40.60 -6.70 0.46 -146.60 -17.72 0.130 -123.00 0.82 -25.80 3.54 17.0 0.94 -52.30 -7.61 0.42 -160.30 -17.92 0.127 -135.30 0.82 -37.90 3.45 18.0 0.93 -61.40 -8.97 0.36 -170.90 -18.64 0.117 -144.00 0.84 -49.70 2.08 frequency (ghz) figure 23. msg/mag and |s 21 | 2 vs. frequency at 3v, 60 ma. msg/mag and |s 21 | 2 (db) 020 40 30 20 10 0 -10 10 515 msg mag |s 21 | 2
11 notes: 1. the f min values are based on a set of 16 noise figure measurements made at 16 different impedances using an atf np5 test system. from these measurements a true f min is calculated. refer to the noise parameter application section for more information. 2. s and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. the input reference plane is at the end of the gate lead. the output reference plane is at the end of the drain lead. the parameters include the effect of four pla ted through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side o f the carrier. two 0.020 inch diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each si de of that point. atf-33143 typical noise parameters v ds = 4 v, i ds = 40 ma freq. f min opt r n/50 g a ghz db mag. ang. - db 0.5 0.30 0.44 31.50 0.08 25.59 0.9 0.33 0.36 42.70 0.07 21.43 1.0 0.34 0.33 44.50 0.08 20.63 1.5 0.38 0.26 68.70 0.06 17.72 1.8 0.37 0.25 90.70 0.05 16.65 2.0 0.40 0.23 106.40 0.05 15.99 2.5 0.53 0.27 145.80 0.04 14.70 3.0 0.54 0.31 162.00 0.03 13.32 4.0 0.60 0.38 -165.30 0.04 11.47 5.0 0.68 0.46 -138.80 0.05 10.17 6.0 0.82 0.49 -115.40 0.09 8.93 7.0 0.89 0.56 -93.20 0.19 7.99 8.0 1.00 0.60 -73.10 0.33 7.00 9.0 1.07 0.66 -56.60 0.50 6.40 10.0 1.16 0.68 -42.80 0.65 6.11 atf-33143 typical scattering parameters, v ds = 4 v, i ds = 40 ma freq. s 11 s 21 s 12 s 22 msg/mag (ghz) mag. ang. db mag. ang. db mag. ang. mag. ang. (db) 0.5 0.87 -72.50 22.73 13.74 134.30 -27.39 0.043 54.10 0.26 -104.90 25.04 0.8 0.78 -111.80 20.07 10.09 111.00 -24.42 0.060 40.40 0.33 -140.20 22.26 1.0 0.77 -119.40 19.46 9.43 106.40 -24.20 0.062 37.70 0.34 -147.10 21.82 1.5 0.73 -149.10 16.69 6.85 88.20 -22.90 0.072 29.80 0.38 -169.70 19.78 1.8 0.72 -162.20 15.28 5.82 79.80 -22.44 0.076 26.90 0.40 -179.30 18.84 2.0 0.72 -169.50 14.41 5.26 74.70 -22.23 0.078 25.00 0.41 175.10 18.29 2.5 0.72 173.00 12.55 4.24 63.00 -21.58 0.084 21.20 0.44 165.10 17.03 3.0 0.73 159.80 10.95 3.53 53.20 -21.07 0.089 17.80 0.46 156.50 15.98 4.0 0.74 137.70 8.54 2.68 35.10 -19.93 0.101 10.40 0.48 142.50 14.23 5.0 0.75 117.90 6.80 2.19 17.10 -18.92 0.113 0.70 0.49 127.70 11.54 6.0 0.77 98.80 5.28 1.84 -1.60 -18.11 0.124 -11.20 0.50 111.00 10.07 7.0 0.79 80.80 3.72 1.54 -19.80 -17.68 0.130 -24.10 0.53 93.40 8.68 8.0 0.82 65.10 2.29 1.30 -35.90 -17.50 0.133 -35.10 0.56 77.30 7.77 9.0 0.83 50.90 1.10 1.14 -50.20 -17.23 0.137 -44.60 0.59 64.90 6.80 10.0 0.86 36.80 0.15 1.02 -65.60 -16.69 0.146 -56.10 0.62 53.00 6.78 11.0 0.88 22.00 -0.93 0.90 -81.80 -16.58 0.148 -69.10 0.65 39.50 6.55 12.0 0.90 7.60 -2.14 0.78 -97.60 -16.81 0.144 -81.70 0.69 23.50 6.13 13.0 0.91 -4.70 -3.69 0.66 -112.40 -17.32 0.136 -93.50 0.72 7.50 5.03 14.0 0.91 -15.30 -4.97 0.57 -124.50 -17.78 0.129 -102.10 0.76 -4.30 4.06 15.0 0.92 -27.20 -5.92 0.51 -137.30 -17.93 0.127 -112.20 0.79 -14.60 3.87 16.0 0.93 -40.30 -6.85 0.46 -150.10 -17.79 0.129 -122.80 0.81 -24.50 3.62 17.0 0.94 -52.20 -7.83 0.41 -163.80 -18.00 0.126 -135.10 0.82 -36.80 3.54 18.0 0.93 -61.20 -9.19 0.35 -174.60 -18.72 0.116 -143.80 0.84 -48.70 2.05 frequency (ghz) figure 24. msg/mag and |s 21 | 2 vs. frequency at 4v, 40 ma. msg/mag and |s 21 | 2 (db) 020 40 30 20 10 0 -10 10 515 msg mag |s 21 | 2
12 notes: 1. the f min values are based on a set of 16 noise figure measurements made at 16 different impedances using an atf np5 test system. from these measurements a true f min is calculated. refer to the noise parameter application section for more information. 2. s and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. the input reference plane is at the end of the gate lead. the output reference plane is at the end of the drain lead. the parameters include the effect of four pla ted through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side o f the carrier. two 0.020 inch diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each si de of that point. atf-33143 typical noise parameters v ds = 4 v, i ds = 60 ma freq. f min opt r n/50 g a ghz db mag. ang. - db 0.5 0.29 0.42 31.40 0.08 25.91 0.9 0.33 0.33 44.70 0.07 21.80 1.0 0.34 0.32 48.00 0.07 21.00 1.5 0.38 0.26 71.90 0.06 18.14 1.8 0.39 0.22 94.00 0.05 16.96 2.0 0.42 0.22 109.70 0.05 16.29 2.5 0.47 0.25 149.40 0.03 14.95 3.0 0.51 0.29 166.80 0.03 13.58 4.0 0.63 0.39 -160.60 0.04 11.74 5.0 0.72 0.46 -135.30 0.06 10.36 6.0 0.82 0.51 -112.40 0.11 9.17 7.0 0.93 0.57 -90.90 0.21 8.18 8.0 1.03 0.61 -71.80 0.37 7.19 9.0 1.13 0.66 -55.50 0.55 6.56 10.0 1.22 0.69 -41.80 0.72 6.29 atf-33143 typical scattering parameters, v ds = 4 v, i ds = 60 ma freq. s 11 s 21 s 12 s 22 msg/mag (ghz) mag. ang. db mag. ang. db mag. ang. mag. ang. (db) 0.5 0.86 -75.60 23.20 14.45 132.90 -28.18 0.039 54.80 0.26 -118.50 25.69 0.8 0.77 -115.00 20.45 10.53 109.80 -25.35 0.054 42.20 0.34 -150.00 22.90 1.0 0.76 -122.50 19.80 9.77 105.30 -25.04 0.056 40.20 0.35 -155.50 22.42 1.5 0.73 -151.80 16.98 7.06 87.50 -23.61 0.066 33.20 0.39 -176.10 20.29 1.8 0.72 -164.60 15.55 5.99 79.20 -22.97 0.071 30.60 0.41 175.00 19.26 2.0 0.72 -171.80 14.66 5.41 74.20 -22.73 0.073 28.90 0.42 169.80 18.70 2.5 0.72 171.00 12.79 4.36 62.70 -21.94 0.080 25.10 0.45 160.60 17.36 3.0 0.73 158.20 11.17 3.62 53.00 -21.31 0.086 21.60 0.47 152.70 16.24 4.0 0.74 136.50 8.76 2.74 35.20 -20.00 0.100 13.70 0.49 139.90 13.79 5.0 0.75 117.00 7.00 2.24 17.50 -18.86 0.114 3.40 0.50 125.70 11.57 6.0 0.77 98.00 5.48 1.88 -1.00 -17.99 0.126 -8.90 0.51 109.10 10.15 7.0 0.79 80.20 3.92 1.57 -19.00 -17.52 0.133 -22.30 0.54 91.60 8.80 8.0 0.82 64.70 2.48 1.33 -34.90 -17.39 0.135 -33.60 0.57 75.90 7.88 9.0 0.83 50.60 1.29 1.16 -49.10 -17.08 0.140 -43.40 0.60 63.70 6.92 10.0 0.86 36.60 0.34 1.04 -64.30 -16.54 0.149 -55.20 0.63 52.00 6.92 11.0 0.88 21.80 -0.72 0.92 -80.40 -16.48 0.150 -68.40 0.66 38.50 6.69 12.0 0.90 7.50 -1.94 0.80 -96.20 -16.71 0.146 -81.10 0.70 22.50 6.27 13.0 0.91 -4.80 -3.48 0.67 -110.80 -17.27 0.137 -92.90 0.73 6.70 5.14 14.0 0.91 -15.40 -4.73 0.58 -122.80 -17.65 0.131 -101.60 0.76 -5.20 4.12 15.0 0.92 -27.30 -5.68 0.52 -135.40 -17.79 0.129 -111.60 0.79 -15.20 3.90 16.0 0.93 -40.40 -6.56 0.47 -148.30 -17.72 0.130 -122.20 0.81 -25.10 3.72 17.0 0.94 -52.20 -7.54 0.42 -162.10 -17.92 0.127 -134.70 0.82 -37.30 3.59 18.0 0.93 -61.20 -8.87 0.36 -172.80 -18.56 0.118 -143.30 0.84 -49.20 2.19 frequency (ghz) figure 25. msg/mag and |s 21 | 2 vs. frequency at 4v, 60 ma. msg/mag and |s 21 | 2 (db) 020 40 30 20 10 0 -10 10 515 msg mag |s 21 | 2
13 notes: 1. the f min values are based on a set of 16 noise figure measurements made at 16 different impedances using an atf np5 test system. from these measurements a true f min is calculated. refer to the noise parameter application section for more information. 2. s and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. the input reference plane is at the end of the gate lead. the output reference plane is at the end of the drain lead. the parameters include the effect of four pla ted through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side o f the carrier. two 0.020 inch diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each si de of that point. atf-33143 typical noise parameters v ds = 4 v, i ds = 80 ma freq. f min opt r n/50 g a ghz db mag. ang. - db 0.5 0.30 0.42 34.50 0.08 26.23 0.9 0.35 0.32 46.40 0.07 21.96 1.0 0.35 0.32 50.40 0.07 21.16 1.5 0.40 0.23 74.80 0.06 18.47 1.8 0.42 0.20 98.80 0.05 17.18 2.0 0.45 0.19 114.10 0.05 16.48 2.5 0.49 0.23 153.70 0.04 15.09 3.0 0.55 0.28 171.50 0.03 13.70 4.0 0.68 0.38 -156.70 0.04 11.85 5.0 0.75 0.48 -133.30 0.07 10.49 6.0 0.90 0.52 -110.70 0.13 9.27 7.0 1.00 0.57 -89.60 0.25 8.27 8.0 1.12 0.62 -70.80 0.43 7.28 9.0 1.19 0.67 -54.60 0.65 6.66 10.0 1.33 0.69 -40.80 0.85 6.31 atf-33143 typical scattering parameters, v ds = 4 v, i ds = 80 ma freq. s 11 s 21 s 12 s 22 msg/mag (ghz) mag. ang. db mag. ang. db mag. ang. mag. ang. (db) 0.5 0.86 -77.20 23.39 14.76 132.20 -28.82 0.036 55.30 0.26 -125.40 26.13 0.8 0.77 -116.60 20.60 10.71 109.20 -25.86 0.051 43.40 0.34 -154.80 23.22 1.0 0.76 -124.00 19.93 9.91 104.80 -25.49 0.053 41.70 0.36 -159.50 22.72 1.5 0.73 -153.00 17.09 7.15 87.10 -23.86 0.064 35.20 0.39 -179.10 20.48 1.8 0.72 -165.80 15.66 6.06 78.90 -23.31 0.068 32.70 0.41 172.40 19.50 2.0 0.72 -172.90 14.77 5.47 74.00 -22.95 0.071 31.00 0.42 167.30 18.87 2.5 0.72 170.10 12.89 4.41 62.50 -22.03 0.079 27.20 0.45 158.50 17.47 3.0 0.73 157.40 11.27 3.66 53.00 -21.39 0.085 23.50 0.48 151.00 16.34 4.0 0.74 136.00 8.84 2.77 35.30 -20.00 0.100 15.30 0.50 138.80 13.59 5.0 0.75 116.70 7.09 2.26 17.70 -18.86 0.114 4.80 0.51 124.80 11.56 6.0 0.77 97.70 5.57 1.90 -0.70 -17.99 0.126 -7.80 0.52 108.40 10.17 7.0 0.79 80.00 4.00 1.58 -18.70 -17.47 0.134 -21.30 0.55 90.90 8.84 8.0 0.82 64.50 2.55 1.34 -34.50 -17.34 0.136 -32.80 0.58 75.40 7.93 9.0 0.83 50.50 1.36 1.17 -48.70 -17.03 0.141 -42.80 0.61 63.30 6.98 10.0 0.86 36.50 0.43 1.05 -63.80 -16.49 0.150 -54.60 0.63 51.60 6.96 11.0 0.88 21.70 -0.65 0.93 -79.90 -16.38 0.152 -67.80 0.66 38.10 6.73 12.0 0.90 7.40 -1.85 0.81 -95.60 -16.66 0.147 -80.60 0.70 22.10 6.26 13.0 0.91 -4.80 -3.39 0.68 -110.20 -17.21 0.138 -92.60 0.73 6.40 5.21 14.0 0.91 -15.40 -4.64 0.59 -122.00 -17.59 0.132 -101.10 0.76 -5.00 4.20 15.0 0.92 -27.30 -5.57 0.53 -134.80 -17.79 0.129 -111.20 0.79 -15.40 3.98 16.0 0.93 -40.40 -6.46 0.47 -147.60 -17.65 0.131 -121.90 0.81 -25.30 3.73 17.0 0.94 -52.20 -7.40 0.43 -161.40 -17.85 0.128 -134.30 0.82 -37.50 3.65 18.0 0.93 -61.20 -8.75 0.36 -172.10 -18.56 0.118 -143.10 0.84 -49.30 2.24 frequency (ghz) figure 26. msg/mag and |s 21 | 2 vs. frequency at 4v, 80 ma. msg/mag and |s 21 | 2 (db) 020 40 30 20 10 0 -10 10 515 msg mag |s 21 | 2
14 noise parameter applications information f min values at 2 ghz and higher are based on measurements while the f mins below 2 ghz have been extrapolated. the f min values are based on a set of 16 noise figure measurements made at 16 different impedances using an atn np5 test system. from these measurements, a true f min is calculated. f min represents the true minimum noise figure of the device when the device is pre- sented with an impedance matching network that trans- forms the source impedance, typically 50 ? , to an impedance represented by the reflection coefficient o . the designer must design a matching network that will present o to the device with minimal associated circuit losses. the noise figure of the completed amplifier is equal to the noise figure of the device plus the losses of the matching network preceding the device. the noise figure of the device is equal to f min only when the device is presented with o . if the reflec- tion coefficient of the matching network is other than o , then the noise figure of the device will be greater than f min based on the following equation. nf = f min + 4 r n | s C o | 2 zo (|1 + o | 2 )(1 C s | 2 ) where r n /z o is the normalized noise resistance, o is the opti- mum reflection coefficient required to produce f min and s is the reflection coefficient of the source impedance actually presented to the device. the losses of the matching networks are non-zero and they will also add to the noise figure of the device creating a higher amplifier noise figure. the losses of the matching networks are related to the q of the components and associated printed circuit board loss. o is typically fairly low at higher frequencies and increases as frequency is lowered. larger gate width devices will typically have a lower o as compared to narrower gate width devices. typically for fets, the higher o usually infers that an impedance much higher than 50 ? is required for the device to produce f min . at vhf frequencies and even lower l band frequencies, the required impedance can be in the vicinity of several thousand ohms. matching to such a high imped- ance requires very hi-q compo- nents in order to minimize circuit losses. as an example at 900 mhz, when airwwound coils (q > 100) are used for matching networks, the loss can still be up to 0.25 db which will add directly to the noise figure of the device. using muiltilayer molded inductors with qs in the 30 to 50 range results in additional loss over the airwound coil. losses as high as 0.5 db or greater add to the typical 0.15 db f min of the device creating an amplifier noise figure of nearly 0.65 db. a discussion concerning calculated and measured circuit losses and their effect on ampli- fier noise figure is covered in agilent application 1085. reliability data nominal failures per million (fpm) 90% confidence failures per million (fpm) for different durations for different durations channel (fits) 1 year 5 year 10 year 30 year (fits) 1 year 5 year 10 year 30 year temperature 1000 1000 ( o c) hours hours 100 <0.1 <0.1 <0.1 <0.1 <0.1 <0.1 <0.1 <0.1 <0.1 <0.1 125 <0.1 <0.1 <0.1 <0.1 <0.1 <0.1 <0.1 <0.1 <0.1 11 140 <0.1 <0.1 <0.1 <0.1 160 <0.1 <0.1 6 160 9.3k 150 <0.1 <0.1 2 140 26k <0.1 0.3 780 8800 131k 160 <0.1 <0.1 920 21k 370k <0.1 67 24k 120k 520k 180 <0.1 4400 450k 830k 1000k 21 53k 590k 850k 1000k not recommended predicted failures with temperature extrapolated from failure distribution and activation energy data of higher temperature operational life strife of phemt process
15 atf-33143 die model this model can be used as a design tool. it has been tested on mds for various specifications. however, for more precise and accurate design, please refer to the measured data in this data sheet. for future improvements agilent reserves the right to change these models without prior notice. atf-33143 model nfet=yes pfet=no vto=0.95 beta=0.48 lambda=0.09 alpha=4 b=0.8 tnom=27 idstc= vbi=0.7 tau= betatce= delta1=0.2 delta2= gscap=3 cgs=1.6 pf gdcap=3 cgd=0.32 pf rgd= tqm= vmax= fc= rd=.125 rg=1 rs=0.0625 ld=0.00375 nh lg-0.00375 nh ls=0.00125 nh cds=0.08 pf crf=0.1 rc=62.5 gsfwd=1 gsrev=0 gdfwd=1 gdrev=0 vjr=1 is=1 na ir=1 na imax=0.1 xti= n= eg= vbr= vtotc= rin= taumd1=no fnc=1e6 r=0.17 c=0.2 p=0.65 wvgfwd= wbvgs= wbvgd= wbvds= wldsmax= wpmax= al lparams= statz model mesfetm1 gate source inside package port g num=1 c c1 c=0.1 pf port s1 num=2 source drain port s2 num=4 port d num=4 l l6 l=0.2 nh r=0.001 c c2 c=0.11 pf l l7 c=0.6 nh r=d 001 msub tlinp tl4 z=z1 ohm l=15 mil k=1 a=0.000 f=1 ghz tand=0.001 tlinp tl10 z=z1 ohm l=15 mil k=1 a=0.000 f=1 ghz tand=0.001 via2 v1 d=20 mil h=25.0 mil t=0.15 mil rho=1.0 w=40 mil via2 v2 d=20.0 mil h=25.0 mil t=0.15 mil rho=1.0 w=40.0 mil tlinp tl3 z=z2 ohm l=25 mil k=k a=0.000 f=1 ghz tand=0.001 tlinptl9 z=z2 ohm l=10.0 mil k=k a=0.000 f=1 ghz tand=0.001 var var1 k=5 z2=85 z1=30 var ean tlinp tl1 z=z2/2 ohm l=20 0 mil k=k a=d 0000 f=1 ghz tand=0.001 tlinp tl2 z=z2/2 ohm l=20 0 mil k=k a=0.0000 f=1 ghz tand=0.001 tlinp tl8 z=z1 ohm l=15 mil k=1 a=0.0000 f=1 ghz tand=0.001 tlinp tl7 z=z2/2 ohm l=5.0 mil k=k a=0.0000 f=1 ghz tand=0.001 tlinp tl5 z=z2 ohm l=26.0 mil k=k a=0.0000 f=1 ghz tand=0.001 tlinp tl6 z=z1 ohm l=15 mil k=1 a=0.0000 f=1 ghz tand=0.001 via2 v3 d=20.0 mil h=25.0 mil t=0.15 mil rho=1.0 w=40.0 mil via2 v4 d=20.0 mil h=25.0 mil t=0.15 mil rho=1.0 w=40.0 mil l l1 l=0.6 nh r=0.001 l l4 l=0.2 nh r=0.001 gaasfet fet1 model=mesfetn1 mode=nonlinear msub msub1 h=25.0 mil er=9.6 mur=1 cond=1 de+50 hu=3.9e+0.34 mil t=0.15 mil tand=d rou g h=d mil
16 part number ordering information no. of part number devices container atf-33143-tr1 3000 7" reel atf-33143-tr2 10000 13" reel atf-33143-blk 100 antistatic bag atf-33143-tr1g 3000 7" reel atf-33143-tr2g 10000 13" reel atf-33143-blkg 100 antistatic bag package dimensions sc-70 4l/sot-343 he d a2 a1 b b1 e 1.30 (.051) bsc 1.15 (.045) bsc c l a dimensions (mm) min. 1.15 1.85 1.80 0.80 0.80 0.00 0.25 0.55 0.10 0.10 max. 1.35 2.25 2.40 1.10 1.00 0.10 0.40 0.70 0.20 0.46 symbol e d he a a2 a1 b b1 c l notes: 1. all dimensions are in mm. 2. dimensions are inclusive of plating. 3. dimensions are exclusive of mold flash & metal burr. 4. all specifications comply to eiaj sc70. 5. die is facing up for mold and facing down for trim/form, ie: reverse trim/form. 6. package surface to be mirror finish. note: for lead-free option, the part number will have the character g at the end.
17 device orientation user feed direction cover tape carrier tape reel 1.30 0.051 0.60 0.024 .090 0.035 dimensions in inches mm 1.15 0.045 2.00 0.079 1.00 0.039 recommended pcb pad layout for agilent's sc70 4l/sot-343 products end view 8 mm 4 mm top view 3px 3px 3px 3px
www.agilent.com/semiconductors for product information and a complete list of distributors, please go to our web site. for technical assistance call: americas/canada: +1 (800) 235-0312 or (916) 788-6763 europe: +49 (0) 6441 92460 china: 10800 650 0017 hong kong: (65) 6756 2394 india, australia, new zealand: (65) 6755 1939 japan: (+81 3) 3335-8152(domestic/international), or 0120-61-1280(domestic only) korea: (65) 6755 1989 singapore, malaysia, vietnam, thailand, philippines, indonesia: (65) 6755 2044 taiwan: (65) 6755 1843 data subject to change. copyright ? 2004 agilent technologies, inc. obsoletes 5988-5906en november 22, 2004 5989-1917en tape dimensions and product orientation for outline 4t p p 0 p 2 f w c d 1 d e a 0 10 max. t 1 (carrier tape thickness) t t (cover tape thickness) 10 max. b 0 k 0 description symbol size (mm) size (inches) length width depth pitch bottom hole diameter a 0 b 0 k 0 p d 1 2.40 0.10 2.40 0.10 1.20 0.10 4.00 0.10 1.00 + 0.25 0.094 0.004 0.094 0.004 0.047 0.004 0.157 0.004 0.039 + 0.010 cavity diameter pitch position d p 0 e 1.55 0.10 4.00 0.10 1.75 0.10 0.061 + 0.002 0.157 0.004 0.069 0.004 perforation width thickness w t 1 8.00 + 0.30 - 0.10 0.254 0.02 0.315 + 0.012 0.0100 0.0008 carrier tape cavity to perforation (width direction) cavity to perforation (length direction) f p 2 3.50 0.05 2.00 0.05 0.138 0.002 0.079 0.002 distance width tape thickness c t t 5.40 0.10 0.062 0.001 0.205 + 0.004 0.0025 0.0004 cover tape

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